SI3441DV vishay siliconix document number: 71839 s-20211?rev. g, 01-apr-02 www.vishay.com 1 p-channel 2.5-v (g-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) b 20 0.10 @ v gs = - 4.5 v - 3.3 -20 0.135 @ v gs = - 2.5 v - 2.9 (4) s (3) g (1, 2, 5, 6) d p-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 sec steady state unit drain-source voltage v ds -20 v gate-source voltage v gs 8 v continuous drain current (t j = 150 c) a, b t a = 25 c i d - 3.3 - 2.3 continuous drain current (t j = 150 c) a, b t a = 70 c i d - 2.6 - 1.8 a pulsed drain current i dm -16 a continuous source current (diode conduction) a, b i s - 1.6 - 0.8 maximum power dissipation a, b t a = 25 c p d 2.0 0.96 w maximum power dissipation a, b t a = 70 c p d 1.28 0.6 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 50 62.5 maximum junction-to-ambient a steady state r thja 106 130 c/w maximum junction-to-foot (drain) steady state r thjf 40 50 notes a. surface mounted on fr4 board. b. t 5 sec for spice model information via the w orldwide web: http://www.vishay .com/www/product/spice.htm
SI3441DV vishay siliconix www.vishay.com 2 document number: 71839 s-20211?rev. g, 01-apr-02 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.45 - 0.95 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v, t j = 70 c -5 a on state drain current a i d( ) v ds = - 5 v, v gs = - 4.5 v -10 a on-state drain current a i d(on) v ds = - 5 v, v gs = - 2.5 v -4 a drain source on state resistance a r v gs = - 4.5 v, i d = - 3.3 a 0.067 0.10 drain-source on-state resistance a r ds(on) v gs = - 2.5 v, i d = - 2.9 a 0.100 0.135 forward transconductance a g fs v ds = - 10 v, i d = - 3.3 a 8 s diode forward voltage a v sd i s = - 1.6 a, v gs = 0 v 0.8 - 1.2 v dynamic b total gate charge q g 5.5 14 gate-source charge q gs v ds = - 10 v, v gs = - 4.5 v, i d = - 3.3 a 1.2 nc gate-drain charge q gd 1.1 turn-on delay time t d(on) 15 50 rise time t r v dd = - 10 v, r l = 10 40 60 turn-off delay time t d(off) v dd = - 10 v , r l = 10 i d - 1.6 a, v gen = - 4.5 v, r g = 6 40 80 ns fall time t f 50 70 source-drain reverse recovery time t rr i f = - 1.6 a, di/dt = 100 a/ s 50 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI3441DV vishay siliconix document number: 71839 s-20211?rev. g, 01-apr-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0 4 8 12 16 012345 0 1 2 3 4 5 0123456 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0.00 0.06 0.12 0.18 0.24 0.30 0 4 8 12 16 0 200 400 600 800 1000 1200 048121620 0 4 8 12 16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature v gs = 4.5 v i d = 3.3 a t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 4.5 thru 3 v 1.5 v 2 v 2.5 v t c = - 55 c 125 c 25 c v gs = 4.5 v v gs = 2.5 v c rss c oss c iss v ds = 10 v i d = 3.3 a 1, 0.5 v
SI3441DV vishay siliconix www.vishay.com 4 document number: 71839 s-20211?rev. g, 01-apr-02 typical characteristics (25 c unless noted) t j = 150 c 0 4 8 12 16 20 0.01 0.10 1.00 10.00 100.00 1000.00 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage threshold v oltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s t j - temperature ( c) time (sec) power (w) 0.00 0.06 0.12 0.18 0.24 0.30 02468 - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 3.3 a i d = 250 a variance (v) v gs(th) 20 10 0.001 0 0.25 0.50 0.75 1.00 1.25 1.50 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.01 0.1 t j = 25 c 1 100 t j = 25 c single pluse
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